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NGD8201ANT4G

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NGD8201ANT4G

Gate-Emitter Leakage Current : 300 uA

Product Category : IGBT Transistors

Mounting Style : SMD/SMT

Continuous Collector Current at 25 C : 20 A

Pd - Power Dissipation : 125 W

Collector- Emitter Voltage VCEO Max : 440 V

Package / Case : DPAK

Maximum Operating Temperature : + 175 C

Maximum Gate Emitter Voltage : 15 V

Packaging : Reel

Configuration : Single

Collector-Emitter Saturation Voltage : 1.5 V

Manufacturer : Littelfuse

Description : IGBT Transistors NGD8201ANT4G GEN4 IGBT

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The NGD8201ANT4G,from Littelfuse,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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